The 2N6438 is a high-power PNP silicon bipolar transistor in a TO-3 package, designed for industrial and military power amplifier and switching applications. It has a maximum collector-emitter voltage of 120V, a continuous collector current of 25A, and a power dissipation of 200W at Tc = +25°C. The device has a collector-emitter saturation voltage of 1.8V maximum at Ic = 25A and Ib = 2.5A, and a DC current gain (hfe) ranging from 12 to 80 depending on collector current. The TO-3 package has dimensions ranging from 38.75mm to 39.96mm in length and 25.2mm to 26.67mm in width. The operating junction temperature range is -65°C to +200°C. The transistor meets RoHS standards.
BIPOLAR TRANSISTOR, PNP, -120V TO-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:120V; Continuous Collector Current:25A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:-; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 01H1391 |
| Product Name | Bipolar Transistor, Pnp, -120V To-3; Transistor Polarity Multicomp Pro |
| Polarity | PNP |
