High-power NPN silicon transistor in a TO-3 package for industrial and military power amplifier and switching applications, with a continuous collector current of 25A, collector-emitter voltage of 150V, and power dissipation of 200W at 25°C case temperature. The device has a collector-emitter saturation voltage of up to 1.8V at 25A collector current and a DC current gain of 30 to 120 at 20mA. Operating junction temperature ranges from -65°C to +200°C. Dimensions are 38.75-39.96mm in height, 19.28-22.23mm in width, and 7.96-9.23mm in thickness. The part meets RoHS compliance and is rated for operation under pulse conditions with a 2% duty cycle and 300μs pulse width.
BIPOLAR TRANSISTOR, NPN, 150V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:150V; Continuous Collector Current:25A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Product Range:-; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 01H1390 |
| Product Name | Bipolar Transistor, Npn, 150V, To-3; Transistor Polarity Multicomp Pro |
| Polarity | NPN |