The 2N6109 is a PNP silicon power transistor in a TO-220AB package for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 50 V DC, a continuous collector current of 7 A, and a total power dissipation of 40 W at 25°C. The device features a DC current gain (hFE) of 30 to 150 at 2.5 A collector current and a minimum current gain-bandwidth product of 10 MHz at 500 mA. Thermal resistance from junction to case is 3.125 °C/W. Operating and storage junction temperature ranges from -65°C to +150°C. The package dimensions are within 14.48 to 15.75 mm in height, 9.66 to 10.28 mm in width, and 4.07 to 4.82 mm in thickness. The part is RoHS compliant.
BIPOLAR TRANSISTOR, PNP -50V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:50V; Continuous Collector Current:7A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:10MHz RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 98K6260 |
| Product Name | Bipolar Transistor, Pnp -50V To-220; Transistor Polarity Multicomp Pro |
| Polarity | PNP |
| Package Type | TO-3; TO-220 |
| IC(max) | 7000 milliamps |