multicomp PRO Bipolar Transistor, Pnp -50V To-220; Transistor Polarity Multicomp Pro 2N6109

Description
BIPOLAR TRANSISTOR, PNP -50V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:50V; Continuous Collector Current:7A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:10MHz RoHS Compliant: Yes
Description
BIPOLAR TRANSISTOR, PNP -50V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:50V; Continuous Collector Current:7A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:10MHz RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The 2N6109 is a PNP silicon power transistor in a TO-220AB package for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 50 V DC, a continuous collector current of 7 A, and a total power dissipation of 40 W at 25°C. The device features a DC current gain (hFE) of 30 to 150 at 2.5 A collector current and a minimum current gain-bandwidth product of 10 MHz at 500 mA. Thermal resistance from junction to case is 3.125 °C/W. Operating and storage junction temperature ranges from -65°C to +150°C. The package dimensions are within 14.48 to 15.75 mm in height, 9.66 to 10.28 mm in width, and 4.07 to 4.82 mm in thickness. The part is RoHS compliant.

Datasheet Summary
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The 2N6109 is a PNP silicon power transistor in a TO-220AB package for general-purpose amplifier and switching applications. It has a collector-emitter voltage rating of 50 V DC, a continuous collector current of 7 A, and a total power dissipation of 40 W at 25°C. The device features a DC current gain (hFE) of 30 to 150 at 2.5 A collector current and a minimum current gain-bandwidth product of 10 MHz at 500 mA. Thermal resistance from junction to case is 3.125 °C/W. Operating and storage junction temperature ranges from -65°C to +150°C. The package dimensions are within 14.48 to 15.75 mm in height, 9.66 to 10.28 mm in width, and 4.07 to 4.82 mm in thickness. The part is RoHS compliant.

Suppliers

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Bipolar Transistor, Pnp -50V To-220; Transistor Polarity Multicomp Pro - 98K6260 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Pnp -50V To-220; Transistor Polarity Multicomp Pro
98K6260
Bipolar Transistor, Pnp -50V To-220; Transistor Polarity Multicomp Pro 98K6260
BIPOLAR TRANSISTOR, PNP -50V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:50V; Continuous Collector Current:7A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:10MHz RoHS Compliant: Yes

BIPOLAR TRANSISTOR, PNP -50V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:50V; Continuous Collector Current:7A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:10MHz RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Bipolar RF Transistors
Product Number 98K6260
Product Name Bipolar Transistor, Pnp -50V To-220; Transistor Polarity Multicomp Pro
Polarity PNP
Package Type TO-3; TO-220
IC(max) 7000 milliamps
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