High-power NPN bipolar transistor in TO-3 package, rated for 80 V collector-emitter voltage and 25 A continuous collector current, with 200 W power dissipation at 25°C case temperature. It has a minimum current gain-bandwidth product of 4 MHz at 1 A collector current, collector-emitter saturation voltage of 1 V at 15 A, and DC current gain of at least 20 at 10 A. Operating junction temperature ranges from -65°C to +200°C. Physical dimensions range from 38.75 mm to 39.96 mm in length, 19.28 mm to 22.23 mm in width, and 7.96 mm to 9.23 mm in height. The device meets RoHS compliance.
BIPOLAR TRANSISTOR, NPN, 80V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:25A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:4MHz RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 01H1385 |
| Product Name | Bipolar Transistor, Npn, 80V, To-3; Transistor Polarity Multicomp Pro |
| Polarity | NPN |
| Package Type | TO-3 |
| IC(max) | 25000 milliamps |
