High current NPN silicon power transistor in a TO-3 package, designed for high-power amplifier and switching applications. It has a continuous collector current rating of 50 A, a collector-emitter voltage rating of 80 V, and a total device dissipation of 300 W at 25°C case temperature. The device derates at 1.715 mW/°C above 25°C and operates with a junction temperature range of -65°C to +200°C. The collector-emitter saturation voltage is 1 V at 25 A collector current and 5 V at 50 A. The DC current gain ranges from 15 to 60 at 20 A collector current. The current gain-bandwidth product is 2 MHz. Physical dimensions include a maximum height of 39.96 mm, maximum diameter of 22.23 mm, and lead spacing up to 26.67 mm.
BIPOLAR TRANSISTOR, NPN, 80V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:50A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:2MHz RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 01H1383 |
| Product Name | Bipolar Transistor, Npn, 80V, To-3; Transistor Polarity Multicomp Pro |
| Polarity | NPN |
| Package Type | TO-3 |
| IC(max) | 50000 milliamps |
