A silicon NPN bipolar transistor in a TO-39 package for use as a driver in amplifier and switching circuits, with a collector-emitter voltage rating of 100 V, a continuous collector current of 1 A, and a total device dissipation of 1 W at +25°C. The junction temperature range is -65°C to +200°C, and the thermal resistance from junction to case is 17.4 °C/W. The transition frequency is 30 MHz, and the current gain ranges from 5 to 150 depending on collector current. The TO-39 package has pin dimensions between 8.5 mm and 9.39 mm in width, with a length of 12.7 mm.
BIPOLAR TRANSISTOR, NPN, 100V TO-39; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:30MHz RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 35C0730 |
| Product Name | Bipolar Transistor, Npn, 100V To-39; Transistor Polarity Multicomp Pro |
| Polarity | NPN |
| Package Type | TO-3; TO-39 |
| IC(max) | 1000 milliamps |
