The 2N5416 is a PNP silicon high voltage transistor in a TO-39 metal can package, designed for high-speed switching and linear amplification in military, industrial, and commercial applications. It has a collector-emitter voltage rating of 300 V, a continuous collector current of 1 A, and a power dissipation of 1 W at 25°C, derating at 200 mW/°C above that temperature. The junction-to-ambient thermal resistance is 150°C/W, and the operating junction temperature range is -65°C to +200°C. The transition frequency exceeds 15 MHz, and the DC current gain ranges from 30 to 120. The device meets RoHS standards.
TRANS, PNP, -300V, -1A, 200DEG C, 1W; Transistor Polarity:PNP; Collector Emitter Voltage Max:300V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:15MHzRoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 98K6257 |
| Product Name | Trans, Pnp, -300V, -1A, 200Deg C, 1W; Transistor Polarity Multicomp Pro |
| Transistor Type | Trans, Pnp, -300V, -1A, 200Deg C, 1W; Transistor Polarity Multicomp Pro |
