The 2N5415 is a high-voltage silicon PNP transistor in a JEDEC TO-39 metal case, designed for high-voltage, low-current switching and regulator applications. It has a collector-base voltage rating of -200 V, a collector-emitter voltage rating of -200 V, and a collector current of -1 A. The device dissipates up to 10 W at 25°C and features a maximum junction-to-case thermal resistance of 17.5°C/W. Electrical characteristics include a collector-emitter saturation voltage of up to -2.5 V at -50 mA collector current and -5 mA base current, a DC current gain ranging from 30 to 150, and a transition frequency of 15 MHz. The TO-39 package has dimensions of 12.7 mm in length and 6.6 mm in diameter.
BIPOLAR TRANSISTOR, PNP, -200V, TO-39; Transistor Polarity:PNP; Collector Emitter Voltage Max:200V; Continuous Collector Current:1A; Power Dissipation:10W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 35C0725 |
| Product Name | Bipolar Transistor, Pnp, -200V, To-39; Transistor Polarity Multicomp Pro |
| Polarity | PNP |