2N5401 is a PNP epitaxial planar silicon transistor in a TO-92 plastic package, rated for a collector-emitter voltage of 150 V and continuous collector current of 600 mA. It dissipates 625 mW at 25 °C ambient temperature, with a junction temperature range of -55 °C to +150 °C. The device has a DC current gain (hFE) between 50 and 240, a transition frequency of 100 to 300 MHz, and an output capacitance of 6 pF. The TO-92 package dimensions are 4.32 to 5.33 mm in height, 4.45 to 5.2 mm in width, and 3.18 to 4.19 mm in depth. It meets RoHS standards.
BIPOLAR TRANSISTOR, PNP, TO-92; Transistor Polarity:PNP; Collector Emitter Voltage Max:150V; Continuous Collector Current:600mA; Power Dissipation:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 35C0724 |
| Product Name | Bipolar Transistor, Pnp, To-92; Transistor Polarity Multicomp Pro |
| Polarity | PNP |