NPN silicon bipolar transistor in a TO-3 package, designed for power amplifier and switching applications, with a maximum collector-emitter voltage of 40V, continuous collector current of 30A, and power dissipation of 200W at 25°C. The device has a collector-emitter saturation voltage of up to 3V at 30A collector current and a base-emitter saturation voltage up to 3V at 30A collector current. Current gain ranges from 15 to 60 at 15A collector current. The transition frequency is 2MHz. Operating junction temperature ranges from -65°C to +200°C. Physical dimensions are 38.75-39.96mm in height, 19.28-22.23mm in width, and 7.96-9.23mm in depth.
BIPOLAR TRANSISTOR, NPN, 40V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:30A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:2MHz RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 01H1381 |
| Product Name | Bipolar Transistor, Npn, 40V, To-3; Transistor Polarity Multicomp |
| Polarity | NPN |
| Package Type | TO-3 |
| IC(max) | 30000 milliamps |
