Silicon PNP bipolar transistor for power amplification and switching, housed in a TO-126 package with dimensions ranging from 10.8 to 11.05 mm in height, 7.49 to 7.75 mm in width, and 2.41 to 2.67 mm in thickness. It has a collector-emitter voltage rating of 80 V, continuous collector current of 4 A, and power dissipation of 40 W at 25°C case temperature, derating at 320 mW/°C. The operating junction temperature range is -65°C to +150°C. Current gain (hfe) ranges from 7 to 80 depending on bias conditions. The device meets no stated industry standards beyond its electrical and thermal ratings.
TRANSISTOR, BIPOLAR, PNP, 80V, 4A, TO-126-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 01H1379 |
| Product Name | Transistor, Bipolar, Pnp, 80V, 4A, To-126-3; Transistor Polarity Multicomp Pro |
| Polarity | PNP |
