multicomp PRO Transistor, Bipolar, Pnp, 40V, 600Ma, To-92-3; Transistor Polarity Multicomp Pro 2N4403

Description
TRANSISTOR, BIPOLAR, PNP, 40V, 600mA, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes
Description
TRANSISTOR, BIPOLAR, PNP, 40V, 600mA, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The 2N4403 is a PNP silicon planar epitaxial transistor for general purpose switching applications, housed in a TO-92 package with dimensions ranging from 4.32 to 5.33 mm in height, 4.45 to 5.2 mm in width, and 3.18 to 4.19 mm in thickness. It has a collector-emitter voltage rating of 40 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW at 25°C, derating at 5.0 mW/°C above that temperature. Operating and storage junction temperatures range from -55°C to +150°C. It meets no specified industry standards beyond its electrical and thermal ratings. Collector-emitter saturation voltage is less than 0.75 V at 500 mA collector current and 50 mA base current, and DC current gain ranges from 100 to 300 at 150 mA collector current and 2 V collector-emitter voltage. Transition frequency exceeds 200 MHz.

Datasheet Summary
Powered by GS/AI

The 2N4403 is a PNP silicon planar epitaxial transistor for general purpose switching applications, housed in a TO-92 package with dimensions ranging from 4.32 to 5.33 mm in height, 4.45 to 5.2 mm in width, and 3.18 to 4.19 mm in thickness. It has a collector-emitter voltage rating of 40 V, a continuous collector current of 600 mA, and a power dissipation of 625 mW at 25°C, derating at 5.0 mW/°C above that temperature. Operating and storage junction temperatures range from -55°C to +150°C. It meets no specified industry standards beyond its electrical and thermal ratings. Collector-emitter saturation voltage is less than 0.75 V at 500 mA collector current and 50 mA base current, and DC current gain ranges from 100 to 300 at 150 mA collector current and 2 V collector-emitter voltage. Transition frequency exceeds 200 MHz.

Suppliers

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Supplier Links
Transistor, Bipolar, Pnp, 40V, 600Ma, To-92-3; Transistor Polarity Multicomp Pro - 08N7702 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Pnp, 40V, 600Ma, To-92-3; Transistor Polarity Multicomp Pro
08N7702
Transistor, Bipolar, Pnp, 40V, 600Ma, To-92-3; Transistor Polarity Multicomp Pro 08N7702
TRANSISTOR, BIPOLAR, PNP, 40V, 600mA, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes

TRANSISTOR, BIPOLAR, PNP, 40V, 600mA, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Bipolar RF Transistors
Product Number 08N7702
Product Name Transistor, Bipolar, Pnp, 40V, 600Ma, To-92-3; Transistor Polarity Multicomp Pro
Polarity PNP
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