A silicon epitaxial PNP planar transistor in a TO-39 package designed for general purpose amplifier and switching applications, with a maximum collector-emitter voltage of 60V, collector current of 1A, and power dissipation of 1W at 25°C. The device has a thermal resistance of 29 °C/W, operating junction temperature up to +200°C, and a transition frequency of 3 MHz. Pin configuration is emitter, base, collector. Dimensions range from 8.5 to 9.39 mm in length, 7.74 to 8.5 mm in width, and 6.09 to 6.6 mm in height. It meets RoHS compliance.
BIPOLAR TRANSISTOR, PNP, -60V TO-39; Transistor Polarity:PNP; Collector Emitter Voltage Max:60V; Continuous Collector Current:3A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:3MHz RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 35C0714 |
| Product Name | Bipolar Transistor, Pnp, -60V To-39; Transistor Polarity Multicomp Pro |
| Polarity | PNP |
| Package Type | TO-3; TO-39 |
| IC(max) | 3000 milliamps |
