multicomp PRO Bipolar Transistor, Pnp, -40V To-39; Transistor Polarity Multicomp Pro 2N4234

Description
BIPOLAR TRANSISTOR, PNP, -40V TO-39; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
Description
BIPOLAR TRANSISTOR, PNP, -40V TO-39; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The 2N4234 is a silicon PNP bipolar transistor in a TO-39 package, designed for amplifier and switching applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, and a continuous collector current of 1 A. The device dissipates 1 W at 25°C and derates at 6 mW/°C above that temperature. Its operating and storage junction temperature ranges from -65°C to +200°C. Thermal resistance from junction to case is 29°C/W. The transistor has a collector-emitter saturation voltage of 0.6 V at a collector current of 1 A and base current of 125 mA, with a base-emitter on voltage of 1.5 V under the same conditions. Current gain (hFE) ranges from 10 to 150 depending on collector current. It meets RoHS compliance standards.

Datasheet Summary
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The 2N4234 is a silicon PNP bipolar transistor in a TO-39 package, designed for amplifier and switching applications. It has a collector-base voltage rating of 40 V, a collector-emitter voltage rating of 40 V, and a continuous collector current of 1 A. The device dissipates 1 W at 25°C and derates at 6 mW/°C above that temperature. Its operating and storage junction temperature ranges from -65°C to +200°C. Thermal resistance from junction to case is 29°C/W. The transistor has a collector-emitter saturation voltage of 0.6 V at a collector current of 1 A and base current of 125 mA, with a base-emitter on voltage of 1.5 V under the same conditions. Current gain (hFE) ranges from 10 to 150 depending on collector current. It meets RoHS compliance standards.

Suppliers

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Supplier Links
Bipolar Transistor, Pnp, -40V To-39; Transistor Polarity Multicomp Pro - 35C0713 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Pnp, -40V To-39; Transistor Polarity Multicomp Pro
35C0713
Bipolar Transistor, Pnp, -40V To-39; Transistor Polarity Multicomp Pro 35C0713
BIPOLAR TRANSISTOR, PNP, -40V TO-39; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, PNP, -40V TO-39; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Bipolar RF Transistors
Product Number 35C0713
Product Name Bipolar Transistor, Pnp, -40V To-39; Transistor Polarity Multicomp Pro
Polarity PNP
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