The 2N3700 is a silicon NPN bipolar transistor in a TO-18 case for amplifier and switching applications, with a maximum collector-emitter voltage of 80 V, continuous collector current of 1 A, and power dissipation of 500 mW at 25°C. It derates at 2.85 mW/°C above 25°C, with a junction temperature range of -65°C to +200°C. The transistor has a thermal resistance of 97°C/W from junction to case and 350°C/W from junction to ambient. Pin configuration is emitter, base, collector with lead temperature rating of 300°C for 60 seconds. Current gain (hFE) ranges from 15 to 300 depending on collector current, and the current gain-bandwidth product is 100 to 400 MHz. Input and output capacitances are 60 pF and 12 pF respectively at 1 MHz.
BIPOLAR TRANSISTOR, NPN, 80V, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:500mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 35C0706 |
| Product Name | Bipolar Transistor, Npn, 80V, To-18; Transistor Polarity Multicomp Pro |
| Polarity | NPN |
