The 2N3637 is a PNP silicon epitaxial planar transistor in a TO-39 package, designed for driver applications in general-purpose amplifier and switching circuits. It has a maximum collector-emitter voltage of 175V, a continuous collector current rating of 1A, and a power dissipation of 1W at 25°C ambient temperature. The junction-to-ambient thermal resistance is 175°C/W, and the operating junction temperature ranges up to +200°C. The device has a collector-base capacitance of 10pF at 20V and a transition frequency of 200MHz. Package dimensions range from 8.5mm to 9.39mm in length, 7.74mm to 8.5mm in width, and 6.09mm to 6.6mm in height, with a 45° to 48° lead angle. The transistor meets RoHS standards.
BIPOLAR TRANSISTOR, PNP, -175V, TO-39; Transistor Polarity:PNP; Collector Emitter Voltage Max:175V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:-; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 35C0705 |
| Product Name | Bipolar Transistor, Pnp, -175V, To-39; Transistor Polarity Multicomp Pro |
| Polarity | PNP |
