The 2N3019 is a Silicon NPN bipolar transistor in a TO-39 package, designed for amplifier and switching applications. It has a collector-emitter voltage rating of 80V and a continuous collector current of 1A. The device dissipates up to 800mW at 25°C, with a derating of 4.6mW/°C above that temperature. The junction temperature operates from -65°C to +200°C, and thermal resistance from junction to case is 16.5°C/W. DC current gain ranges from 15 to 300 across currents from 150mA to 1A. The collector-emitter saturation voltage is 0.5V at 150mA collector current and 50mA base current. The current gain-bandwidth product is 100 to 400MHz, and output capacitance is up to 12pF. Dimensions are 8.5 to 9.39mm in length, 7.74 to 8.50mm in width, and 6.09 to 6.6mm in height.
TRANSISTOR, BIPOLAR, NPN, 80V, 1A, TO-39-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:800mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 35C0697 |
| Product Name | Transistor, Bipolar, Npn, 80V, 1A, To-39-3; Transistor Polarity Multicomp Pro |
| Polarity | NPN |
