The 2N2222 is an NPN silicon planar switching transistor designed for switching and linear applications in DC and VHF amplifier circuits. It is packaged in a TO-18 metal can with dimensions ranging from 5.24 to 5.84 mm in length, 4.52 to 4.97 mm in body diameter, and 12.7 mm in lead length. The device has a collector-emitter voltage rating of 30 V, a continuous collector current of 800 mA, and a power dissipation of 500 mW at 25°C. The DC current gain (hFE) ranges from 35 to 300 depending on operating conditions, with a transition frequency of 250 MHz. The collector-emitter saturation voltage is 0.4 V at 150 mA collector current and 1.6 V at 500 mA. Operating and storage junction temperatures range from -65°C to +200°C.
Bipolar (BJT) Single Transistor, NPN, 30 V, 500 mW, 800 mA, 100 RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 87K2254 |
| Product Name | Bipolar (Bjt) Single Transistor, Npn, 30 V, 500 Mw, 800 Ma, 100 Rohs Compliant Multicomp Pro |
| Polarity | NPN |
