A silicon NPN bipolar transistor in a TO-39 case for amplifier and switching applications, rated for a maximum collector-emitter voltage of 50 V and continuous collector current of 0.5 A. Power dissipation is 800 mW at 25°C case temperature, derating at 4.6 mW/°C above 25°C. The junction temperature ranges from -65°C to +200°C, with thermal resistance junction-to-case of 58°C/W. Current gain (hFE) ranges from 40 to 300 depending on collector current. The device has a current gain-bandwidth product of 70 MHz and exhibits an output capacitance of 25 pF at 1 MHz. Dimensions are 8.5-9.39 mm in length, 7.74-8.5 mm in width, and 6.09-6.6 mm in height. It meets RoHS standards.
BIPOLAR TRANSISTOR, NPN, 50V, TO-39; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:500mA; Power Dissipation:800mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:-; MSL:-RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 35C0685 |
| Product Name | Bipolar Transistor, Npn, 50V, To-39; Transistor Polarity Multicomp Pro |
| Polarity | NPN |
