MoSys, Inc. Memory MSR820BJC288-12

Name: Memory
Brand: MoSys, Inc.

Description

SRAM, RLDRAM Memory IC 576Mbit Parallel 3.2 ns 288-FCBGA (19x19)

Description

SRAM, RLDRAM Memory IC 576Mbit Parallel 3.2 ns 288-FCBGA (19x19)

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Product

Description

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Shenzhen, Guangdong, China

Memory
MSR820BJC288-12

Memory MSR820BJC288-12

SRAM, RLDRAM Memory IC 576Mbit Parallel 3.2 ns 288-FCBGA (19x19)

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Rochester Electronics

Specs

Memory Category SRAM Chip

Package Type DIP; PDIP16

3 suppliers

Infineon Technologies AG

2 suppliers

Texas Instruments

2 suppliers

Micross Components, Inc.

Specs

Memory Category SRAM; SRAM Chip

Access Time 10 ns

Operating Temperature -55 to 125 C (-67 to 257 F)