MoSys, Inc. Memory MSR820AJE288-10

Description
SRAM, RLDRAM Memory IC 576Mbit Parallel 3.2 ns 288-FCBGA (19x19)
  • Memory - MSR820AJE288-10 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
SRAM, RLDRAM Memory IC 576Mbit Parallel 3.2 ns 288-FCBGA (19x19)

Suppliers

Company
Product
Description
Supplier Links
Memory - MSR820AJE288-10 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MSR820AJE288-10
Memory MSR820AJE288-10
SRAM, RLDRAM Memory IC 576Mbit Parallel 3.2 ns 288-FCBGA (19x19)

SRAM, RLDRAM Memory IC 576Mbit Parallel 3.2 ns 288-FCBGA (19x19)

Buy Now

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number MSR820AJE288-10
Product Name Memory
Memory Category RAM
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882547 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882547
Specs
Memory Category Flash
Number of Words 256 k
Bits per Word 8 bits
View Details
Memory - 16-2948-02-T - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
16-2948-02-T
View Details
2 suppliers
Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ44C256
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 93Z451LMQB - Quarktwin Technology Ltd.
Texas Instruments
Memory
93Z451LMQB
Specs
Memory Category PROM; PROM
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers