The MSR820AJC288-12 is a 576Mb memory device from Quarktwin Technology Ltd., designed for high-speed and high-capacity applications. It features a tRC access time of 3.2 ns and supports up to 3.3 billion transactions per second, making it suitable for applications requiring fast random memory access. The device can operate in two modes: as a standard parallel memory or as a high-density memory with optional In-Memory Acceleration Functions (IMF), which enhance performance for memory-intensive tasks. The memory architecture allows for simultaneous read and write operations, with a high bandwidth of up to 320 Gb/s throughput. It includes features such as burst read/write capabilities and Read/Modify/Write (RMW) functions, which can significantly reduce memory access times and improve execution speed. The device's serial interface minimizes pin count, enhancing signal integrity and simplifying board layout. This memory solution is particularly beneficial for applications in networking, AI, IoT, and other data-intensive environments where low latency and high bandwidth are critical.
1T-SRAM Memory IC 576Mbit Parallel 1.25 GHz 2.6 ns 324-PBGA (19x19)
IC SRAM 576MBIT PAR 324PBGA
IC SRAM 576MBIT PAR 324PBGA
| Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MSR820AJC288-12 | MSR820AJC288-12 | MSR820AJC288-12 |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | SRAM; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 2.6 ns | 2.6 ns | |
| Operating Temperature | 0 to 85 C (32 to 185 F) | ||
| Density | 576000 kbits | 576000 kbits | 576000 kbits |
