MoSys, Inc. Memory MSR630AGE-1512

Name: Memory
Brand: MoSys, Inc.

Description

SRAM, RLDRAM Memory IC 1Gbit Parallel 2.7 ns 1512-FCBGA (27x27)

Description

SRAM, RLDRAM Memory IC 1Gbit Parallel 2.7 ns 1512-FCBGA (27x27)

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Description

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Shenzhen, Guangdong, China

Memory
MSR630AGE-1512

Memory MSR630AGE-1512

SRAM, RLDRAM Memory IC 1Gbit Parallel 2.7 ns 1512-FCBGA (27x27)

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Rochester Electronics

Specs

Memory Category SRAM; SRAM Chip

Access Time 20 ns

Density 1000 kbits

$Memory IC and Storage Component - 505-123683\HYS72V128321GR-7.5-C2 - ERSAELECTRONICS PTE. LTD.$

Infineon Technologies AG

Micross Components, Inc.

Specs

Memory Category SRAM; SRAM Chip

Access Time 12 ns

Operating Temperature -55 to 125 C (-67 to 257 F)

Texas Instruments

3 suppliers