MoSys, Inc. Memory MSR630AGC-1512

Description
IC SRAM 1.152GBIT PAR 676BGA
Datasheet
Description
IC SRAM 1.152GBIT PAR 676BGA
Datasheet

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Description
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IC SRAM 1.152GBIT PAR 676BGA

IC SRAM 1.152GBIT PAR 676BGA

Supplier's Site Datasheet
Memory - MSR630AGC-1512 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
1T-SRAM Memory IC 1.152Gbit Parallel 1.25 GHz 2.7 ns 676-BGA (27x27)

1T-SRAM Memory IC 1.152Gbit Parallel 1.25 GHz 2.7 ns 676-BGA (27x27)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - MSR630AGC-1512 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MSR630AGC-1512
Integrated Circuits (ICs) - Memory - Memory MSR630AGC-1512
IC SRAM 1.152GBIT PAR 676BGA

IC SRAM 1.152GBIT PAR 676BGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MSR630AGC-1512 MSR630AGC-1512 MSR630AGC-1512
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 2.7 ns 2.7 ns
Density 1152000 kbits 1152000 kbits 1152000 kbits
Operating Temperature 0 to 85 C (32 to 185 F)
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