MoSys, Inc. Memory MSR622AJE288-12

Name: Memory
Brand: MoSys, Inc.

Description

SRAM, RLDRAM Memory IC 576Mbit Parallel 3.2 ns 288-FCBGA (19x19)

Description

SRAM, RLDRAM Memory IC 576Mbit Parallel 3.2 ns 288-FCBGA (19x19)

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Company

Product

Description

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Shenzhen, Guangdong, China

Memory
MSR622AJE288-12

Memory MSR622AJE288-12

SRAM, RLDRAM Memory IC 576Mbit Parallel 3.2 ns 288-FCBGA (19x19)

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RS Components, Ltd.

Specs

Memory Category Flash

Density 64000 kbits

Package Type USON

Rochester Electronics

Texas Instruments

Specs

Memory Category FIFO

Micross Components, Inc.

Specs

Memory Category DRAM; DRAM Chip

Access Time 80 to 150 ns

Operating Temperature -55 to 125 C (-67 to 257 F)