MoSys, Inc. Memory MSQ230AGE-1512

Description
Memory IC
Datasheet
Description
Memory IC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MSQ230AGE-1512 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now Datasheet
QPR8-15 GB/S

QPR8-15 GB/S

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MSQ230AGE-1512 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MSQ230AGE-1512
Integrated Circuits (ICs) - Memory - Memory MSQ230AGE-1512
QPR8-15 GB/S

QPR8-15 GB/S

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MSQ230AGE-1512 MSQ230AGE-1512 MSQ230AGE-1512
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
BGA Memory IC and Storage Component - 736-PCI7402ZHK - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
Operating Temperature 0 C (32 F)
Package Type BGA; BGA
View Details
2 suppliers
Memory - 71024S20Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details
Flash Memory - 1882548 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details