Manufacturer: Monolithic Power Systems Inc.
Win Source Part Number: 1055921-LN60A01EP-LF
Packaging: Tube/Rail
Mounting: Through Hole
FET Type: 3 N-Channel, Common Gate
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -20°C to 125°C (TJ)
Case / Package: 8-PDIP
Maximum Power Dissipation: 1.3W
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 80mA
Gate-Source Threshold Voltage: 1.2V @ 250μA
Maximum Rds On at Id,Vgs: 190 Ohm @ 10mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Quantity per package: 1,500
MOSFET 3N-CH 600V 0.08A 8DIP
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1055921-LN60A01EP-LF | LN60A01EP-LF | LN60A01EP-LF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - LN60A01EP-LF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | ||
| V(BR)DSS | 600 volts | ||
| PD | 1300 milliwatts |
