Gelest, Inc. TETRAMETHYLTIN SNT7560

Description
Additional Properties Hydrolytic Sensitivity 1: no significant reaction with aqueous systems Application Reviewed.1 Forms transparent conductive oxides for photovoltaics by PECVD.10 Safety and handling considerations.11 In combination with WCl6 catalyzes olefin metathesis.2 Allows synthesis of even numbered alkanes.3 Converts acid chlorides to methyl ketones with benzylchlorobis(trip henyl phosphine)palladium. 4,5 Forms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphe nylphosphine)nickel. 6 For CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensors.7 Pyrolyzed in vacuum to tin at 600-750°.8 Pyrolyzed oxidatively to SnO at 350-600°.9 Reference 1. Scott, W. J.; Jones, J. H.; Moretto, A. F. in Encyclopedia of Reagents for Organic Synthesis 1995, Volume 8, 4823-4825. 10. Chandra, H. et al. Am. Vac. Soc. 2008, 55, TFThA10. 11. Kalb, P. et al. Report BNL-52123, 1987 Order NTIS #DE89005936. 2. van Dam, P. et al. J. Chem. Soc., Chem. Commun. 1972, 1221. 3. Gibson, T. et al. J. Org. Chem. 1981, 46, 1821. 4. Milstein, D. et al. J. Org. Chem. 1979, 44, 1613. 5. Labadie, J. et al. J. Am. Chem. Soc. 1983, 105, 6129. 6. Tanaka, M. Synthesis 1981, 47. 7. Inagaki, N. J. Appl. Polym. Sci. 1989, 37, 2341. 8. Svoboda, G. et al. Ind. Eng. Chem. Res. 1992, 31, 19. 9. Borman, C. et al. J. Electrochem. Soc. 1989, 136, 3820. Safety Hazard Info ihl mus, LCLo: 2,550 mg/m3 Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Tetramethyltin; Tetramethylstannane ΔHcomb: 903.5 kcal/mol ΔHform, gas, 27 °: -13.6 kcal/mol ΔHvap: 6.8 kcal/mol Sn-Me bond dissociation energy: 227 kJ/mol Ea, pyrolysis: 41.1 kcal/mol Vapor pressure, -21 °C: 10 mm Vapor pressure, 20 °C: 90 mm Allows synthesis of even numbered alkanes Converts acid chlorides to methyl ketones with benzylchlorobis(trip henyl phosphine)palladium Forms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphe nylphosphine)nickel For CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensors Pyrolyzed in vacuum to tin at 600-750 °C Pyrolyzed oxidatively to SnO at 350-600 °C Forms transparent conductive oxides for photovoltaics by Plasma-enhanced chemical vapor deposition (PECVD) Higher purity grade available, SNT7560.1
Datasheet
Description
Additional Properties Hydrolytic Sensitivity 1: no significant reaction with aqueous systems Application Reviewed.1 Forms transparent conductive oxides for photovoltaics by PECVD.10 Safety and handling considerations.11 In combination with WCl6 catalyzes olefin metathesis.2 Allows synthesis of even numbered alkanes.3 Converts acid chlorides to methyl ketones with benzylchlorobis(trip henyl phosphine)palladium. 4,5 Forms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphe nylphosphine)nickel. 6 For CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensors.7 Pyrolyzed in vacuum to tin at 600-750°.8 Pyrolyzed oxidatively to SnO at 350-600°.9 Reference 1. Scott, W. J.; Jones, J. H.; Moretto, A. F. in Encyclopedia of Reagents for Organic Synthesis 1995, Volume 8, 4823-4825. 10. Chandra, H. et al. Am. Vac. Soc. 2008, 55, TFThA10. 11. Kalb, P. et al. Report BNL-52123, 1987 Order NTIS #DE89005936. 2. van Dam, P. et al. J. Chem. Soc., Chem. Commun. 1972, 1221. 3. Gibson, T. et al. J. Org. Chem. 1981, 46, 1821. 4. Milstein, D. et al. J. Org. Chem. 1979, 44, 1613. 5. Labadie, J. et al. J. Am. Chem. Soc. 1983, 105, 6129. 6. Tanaka, M. Synthesis 1981, 47. 7. Inagaki, N. J. Appl. Polym. Sci. 1989, 37, 2341. 8. Svoboda, G. et al. Ind. Eng. Chem. Res. 1992, 31, 19. 9. Borman, C. et al. J. Electrochem. Soc. 1989, 136, 3820. Safety Hazard Info ihl mus, LCLo: 2,550 mg/m3 Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Tetramethyltin; Tetramethylstannane ΔHcomb: 903.5 kcal/mol ΔHform, gas, 27 °: -13.6 kcal/mol ΔHvap: 6.8 kcal/mol Sn-Me bond dissociation energy: 227 kJ/mol Ea, pyrolysis: 41.1 kcal/mol Vapor pressure, -21 °C: 10 mm Vapor pressure, 20 °C: 90 mm Allows synthesis of even numbered alkanes Converts acid chlorides to methyl ketones with benzylchlorobis(trip henyl phosphine)palladium Forms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphe nylphosphine)nickel For CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensors Pyrolyzed in vacuum to tin at 600-750 °C Pyrolyzed oxidatively to SnO at 350-600 °C Forms transparent conductive oxides for photovoltaics by Plasma-enhanced chemical vapor deposition (PECVD) Higher purity grade available, SNT7560.1
Datasheet

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Product
Description
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TETRAMETHYLTIN - SNT7560 - Gelest, Inc.
Morrisville, PA, United States
TETRAMETHYLTIN
SNT7560
TETRAMETHYLTIN SNT7560
Additional Properties Hydrolytic Sensitivity 1: no significant reaction with aqueous systems Application Reviewed.1 Forms transparent conductive oxides for photovoltaics by PECVD.10 Safety and handling considerations.11 In combination with WCl6 catalyzes olefin metathesis.2 Allows synthesis of even numbered alkanes.3 Converts acid chlorides to methyl ketones with benzylchlorobis(trip henyl phosphine)palladium. 4,5 Forms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphe nylphosphine)nickel. 6 For CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensors.7 Pyrolyzed in vacuum to tin at 600-750°.8 Pyrolyzed oxidatively to SnO at 350-600°.9 Reference 1. Scott, W. J.; Jones, J. H.; Moretto, A. F. in Encyclopedia of Reagents for Organic Synthesis 1995, Volume 8, 4823-4825. 10. Chandra, H. et al. Am. Vac. Soc. 2008, 55, TFThA10. 11. Kalb, P. et al. Report BNL-52123, 1987 Order NTIS #DE89005936. 2. van Dam, P. et al. J. Chem. Soc., Chem. Commun. 1972, 1221. 3. Gibson, T. et al. J. Org. Chem. 1981, 46, 1821. 4. Milstein, D. et al. J. Org. Chem. 1979, 44, 1613. 5. Labadie, J. et al. J. Am. Chem. Soc. 1983, 105, 6129. 6. Tanaka, M. Synthesis 1981, 47. 7. Inagaki, N. J. Appl. Polym. Sci. 1989, 37, 2341. 8. Svoboda, G. et al. Ind. Eng. Chem. Res. 1992, 31, 19. 9. Borman, C. et al. J. Electrochem. Soc. 1989, 136, 3820. Safety Hazard Info ihl mus, LCLo: 2,550 mg/m3 Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Tetramethyltin; Tetramethylstannane ΔHcomb: 903.5 kcal/mol ΔHform, gas, 27 °: -13.6 kcal/mol ΔHvap: 6.8 kcal/mol Sn-Me bond dissociation energy: 227 kJ/mol Ea, pyrolysis: 41.1 kcal/mol Vapor pressure, -21 °C: 10 mm Vapor pressure, 20 °C: 90 mm Allows synthesis of even numbered alkanes Converts acid chlorides to methyl ketones with benzylchlorobis(trip henyl phosphine)palladium Forms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphe nylphosphine)nickel For CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensors Pyrolyzed in vacuum to tin at 600-750 °C Pyrolyzed oxidatively to SnO at 350-600 °C Forms transparent conductive oxides for photovoltaics by Plasma-enhanced chemical vapor deposition (PECVD) Higher purity grade available, SNT7560.1

Additional Properties


  • Hydrolytic Sensitivity 1: no significant reaction with aqueous systems
    Application
    Reviewed.1 Forms transparent conductive oxides for photovoltaics by PECVD.10 Safety and handling considerations.11 In combination with WCl6 catalyzes olefin metathesis.2 Allows synthesis of even numbered alkanes.3 Converts acid chlorides to methyl ketones with benzylchlorobis(triphenyl phosphine)palladium.4,5 Forms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphenylphosphine)nickel.6 For CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensors.7 Pyrolyzed in vacuum to tin at 600-750°.8 Pyrolyzed oxidatively to SnO at 350-600°.9
    Reference
    1. Scott, W. J.; Jones, J. H.; Moretto, A. F. in Encyclopedia of Reagents for Organic Synthesis 1995, Volume 8, 4823-4825. 10. Chandra, H. et al. Am. Vac. Soc. 2008, 55, TFThA10. 11. Kalb, P. et al. Report BNL-52123, 1987 Order NTIS #DE89005936. 2. van Dam, P. et al. J. Chem. Soc., Chem. Commun. 1972, 1221. 3. Gibson, T. et al. J. Org. Chem. 1981, 46, 1821. 4. Milstein, D. et al. J. Org. Chem. 1979, 44, 1613. 5. Labadie, J. et al. J. Am. Chem. Soc. 1983, 105, 6129. 6. Tanaka, M. Synthesis 1981, 47. 7. Inagaki, N. J. Appl. Polym. Sci. 1989, 37, 2341. 8. Svoboda, G. et al. Ind. Eng. Chem. Res. 1992, 31, 19. 9. Borman, C. et al. J. Electrochem. Soc. 1989, 136, 3820.
    Safety
  • Hazard Info ihl mus, LCLo: 2,550 mg/m3
  • Packaging Under Nitrogen
    ALD Material
    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
    Tetramethyltin; Tetramethylstannane
  • ΔHcomb: 903.5 kcal/mol
  • ΔHform, gas, 27 °: -13.6 kcal/mol
  • ΔHvap: 6.8 kcal/mol
  • Sn-Me bond dissociation energy: 227 kJ/mol
  • Ea, pyrolysis: 41.1 kcal/mol
  • Vapor pressure, -21 °C: 10 mm
  • Vapor pressure, 20 °C: 90 mm
  • Allows synthesis of even numbered alkanes
  • Converts acid chlorides to methyl ketones with benzylchlorobis(triphenyl phosphine)palladium
  • Forms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphenylphosphine)nickel
  • For CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensors
  • Pyrolyzed in vacuum to tin at 600-750 °C
  • Pyrolyzed oxidatively to SnO at 350-600 °C
  • Forms transparent conductive oxides for photovoltaics by Plasma-enhanced chemical vapor deposition (PECVD)
  • Higher purity grade available, SNT7560.1
Supplier's Site Datasheet

Technical Specifications

  Gelest, Inc.
Product Category Inorganic Chemicals and Compounds
Product Number SNT7560
Product Name TETRAMETHYLTIN
Type OrganoMetallics
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