Gelest, Inc. OCTAMETHYLCYCLOTETRASILOXANE, 98% SIO6700.0

Additional Properties Hydrolytic Sensitivity 1: no significant reaction with aqueous systems Surface Tension (mN/m) 17.9 Safety Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Octamethylcyclotetra siloxane; D4; Cyclic tetramer; Cyclomethicone; Cyclohexasiloxane; Cyclotetrasiloxane; OMCTS Viscosity: 2.3 cSt ΔHfus: 18.4 kJ/mol ΔHvap: 45.6 kJ/mol Dipole moment: 1.09 debye Vapor pressure, 23 °C: 1 mm Dielectric constant: 2.39 Ring strain: 1.00 kJ/mol Surface tension, 20 °C: 17.9 mN/m Critical temperature: 314 °C Critical pressure: 1.03 mPa Specific heat: 502 J/g/° Coefficient of thermal expansion: 0.8 x 10-3 Cryoscopic constant: 11.2 Henry’s law constant, Hc: 3.4 ± 1.7 Ea, polym: 79 kJ/mol Octanol/water partition coefficient, log Kow: 5.1 Basic building block for silicones by ring-opening polymerization Solubility, water: 50 ?g/l