Additional Properties
Hydrolytic Sensitivity 1: no significant reaction with aqueous systems
Surface Tension (mN/m) 17.9 Safety
Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Octamethylcyclotetra
siloxane; D4; Cyclic tetramer; Cyclomethicone; Cyclohexasiloxane; Cyclotetrasiloxane; OMCTS
Viscosity: 2.3 cSt
ΔHfus: 18.4 kJ/mol
ΔHvap: 45.6 kJ/mol
Dipole moment: 1.09 debye
Vapor pressure, 23 °C: 1 mm
Dielectric constant: 2.39
Ring strain: 1.00 kJ/mol
Surface tension, 20 °C: 17.9 mN/m
Critical temperature: 314 °C
Critical pressure: 1.03 mPa
Specific heat: 502 J/g/°
Coefficient of thermal expansion: 0.8 x 10-3
Cryoscopic constant: 11.2
Henry’s law constant, Hc: 3.4 ± 1.7
Ea, polym: 79 kJ/mol
Octanol/water partition coefficient, log Kow: 5.1
Basic building block for silicones by ring-opening polymerization
Solubility, water: 50 ?g/l
Gelest, Inc.
Done
Datasheet
Description
Additional Properties
Hydrolytic Sensitivity 1: no significant reaction with aqueous systems
Surface Tension (mN/m) 17.9 Safety
Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Octamethylcyclotetra
siloxane; D4; Cyclic tetramer; Cyclomethicone; Cyclohexasiloxane; Cyclotetrasiloxane; OMCTS
Viscosity: 2.3 cSt
ΔHfus: 18.4 kJ/mol
ΔHvap: 45.6 kJ/mol
Dipole moment: 1.09 debye
Vapor pressure, 23 °C: 1 mm
Dielectric constant: 2.39
Ring strain: 1.00 kJ/mol
Surface tension, 20 °C: 17.9 mN/m
Critical temperature: 314 °C
Critical pressure: 1.03 mPa
Specific heat: 502 J/g/°
Coefficient of thermal expansion: 0.8 x 10-3
Cryoscopic constant: 11.2
Henry’s law constant, Hc: 3.4 ± 1.7
Ea, polym: 79 kJ/mol
Octanol/water partition coefficient, log Kow: 5.1
Basic building block for silicones by ring-opening polymerization
Solubility, water: 50 ?g/l
Additional Properties
Hydrolytic Sensitivity 1: no significant reaction with aqueous systems
Surface Tension (mN/m) 17.9 Safety
Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Octamethylcyclotetra
siloxane; D4; Cyclic tetramer; Cyclomethicone; Cyclohexasiloxane; Cyclotetrasiloxane; OMCTS
Viscosity: 2.3 cSt
ΔHfus: 18.4 kJ/mol
ΔHvap: 45.6 kJ/mol
Dipole moment: 1.09 debye
Vapor pressure, 23 °C: 1 mm
Dielectric constant: 2.39
Ring strain: 1.00 kJ/mol
Surface tension, 20 °C: 17.9 mN/m
Critical temperature: 314 °C
Critical pressure: 1.03 mPa
Specific heat: 502 J/g/°
Coefficient of thermal expansion: 0.8 x 10-3
Cryoscopic constant: 11.2
Henry’s law constant, Hc: 3.4 ± 1.7
Ea, polym: 79 kJ/mol
Octanol/water partition coefficient, log Kow: 5.1
Basic building block for silicones by ring-opening polymerization
Solubility, water: 50 ?g/l
Additional Properties
Hydrolytic Sensitivity 1: no significant reaction with aqueous systems
Surface Tension (mN/m) 17.9
Safety
Packaging Under Nitrogen
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Octamethylcyclotetrasiloxane; D4; Cyclic tetramer; Cyclomethicone; Cyclohexasiloxane; Cyclotetrasiloxane; OMCTS
Viscosity: 2.3 cSt
ΔHfus: 18.4 kJ/mol
ΔHvap: 45.6 kJ/mol
Dipole moment: 1.09 debye
Vapor pressure, 23 °C: 1 mm
Dielectric constant: 2.39
Ring strain: 1.00 kJ/mol
Surface tension, 20 °C: 17.9 mN/m
Critical temperature: 314 °C
Critical pressure: 1.03 mPa
Specific heat: 502 J/g/°
Coefficient of thermal expansion: 0.8 x 10-3
Cryoscopic constant: 11.2
Henry’s law constant, Hc: 3.4 ± 1.7
Ea, polym: 79 kJ/mol
Octanol/water partition coefficient, log Kow: 5.1
Basic building block for silicones by ring-opening polymerization
