Gelest, Inc. OCTAMETHYLCYCLOTETRASILOXANE, 98% SIO6700.0

Description
Additional Properties Hydrolytic Sensitivity 1: no significant reaction with aqueous systems Surface Tension (mN/m) 17.9 Safety Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Octamethylcyclotetra siloxane; D4; Cyclic tetramer; Cyclomethicone; Cyclohexasiloxane; Cyclotetrasiloxane; OMCTS Viscosity: 2.3 cSt ΔHfus: 18.4 kJ/mol ΔHvap: 45.6 kJ/mol Dipole moment: 1.09 debye Vapor pressure, 23 °C: 1 mm Dielectric constant: 2.39 Ring strain: 1.00 kJ/mol Surface tension, 20 °C: 17.9 mN/m Critical temperature: 314 °C Critical pressure: 1.03 mPa Specific heat: 502 J/g/° Coefficient of thermal expansion: 0.8 x 10-3 Cryoscopic constant: 11.2 Henry’s law constant, Hc: 3.4 ± 1.7 Ea, polym: 79 kJ/mol Octanol/water partition coefficient, log Kow: 5.1 Basic building block for silicones by ring-opening polymerization Solubility, water: 50 ?g/l
Datasheet
Description
Additional Properties Hydrolytic Sensitivity 1: no significant reaction with aqueous systems Surface Tension (mN/m) 17.9 Safety Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Octamethylcyclotetra siloxane; D4; Cyclic tetramer; Cyclomethicone; Cyclohexasiloxane; Cyclotetrasiloxane; OMCTS Viscosity: 2.3 cSt ΔHfus: 18.4 kJ/mol ΔHvap: 45.6 kJ/mol Dipole moment: 1.09 debye Vapor pressure, 23 °C: 1 mm Dielectric constant: 2.39 Ring strain: 1.00 kJ/mol Surface tension, 20 °C: 17.9 mN/m Critical temperature: 314 °C Critical pressure: 1.03 mPa Specific heat: 502 J/g/° Coefficient of thermal expansion: 0.8 x 10-3 Cryoscopic constant: 11.2 Henry’s law constant, Hc: 3.4 ± 1.7 Ea, polym: 79 kJ/mol Octanol/water partition coefficient, log Kow: 5.1 Basic building block for silicones by ring-opening polymerization Solubility, water: 50 ?g/l
Datasheet

Suppliers

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Product
Description
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OCTAMETHYLCYCLOTETRASILOXANE, 98% - SIO6700.0 - Gelest, Inc.
Morrisville, PA, United States
OCTAMETHYLCYCLOTETRASILOXANE, 98%
SIO6700.0
OCTAMETHYLCYCLOTETRASILOXANE, 98% SIO6700.0
Additional Properties Hydrolytic Sensitivity 1: no significant reaction with aqueous systems Surface Tension (mN/m) 17.9 Safety Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Octamethylcyclotetra siloxane; D4; Cyclic tetramer; Cyclomethicone; Cyclohexasiloxane; Cyclotetrasiloxane; OMCTS Viscosity: 2.3 cSt ΔHfus: 18.4 kJ/mol ΔHvap: 45.6 kJ/mol Dipole moment: 1.09 debye Vapor pressure, 23 °C: 1 mm Dielectric constant: 2.39 Ring strain: 1.00 kJ/mol Surface tension, 20 °C: 17.9 mN/m Critical temperature: 314 °C Critical pressure: 1.03 mPa Specific heat: 502 J/g/° Coefficient of thermal expansion: 0.8 x 10-3 Cryoscopic constant: 11.2 Henry’s law constant, Hc: 3.4 ± 1.7 Ea, polym: 79 kJ/mol Octanol/water partition coefficient, log Kow: 5.1 Basic building block for silicones by ring-opening polymerization Solubility, water: 50 ?g/l

Additional Properties


  • Hydrolytic Sensitivity 1: no significant reaction with aqueous systems
  • Surface Tension (mN/m) 17.9
    Safety
  • Packaging Under Nitrogen
    ALD Material
    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
    Octamethylcyclotetrasiloxane; D4; Cyclic tetramer; Cyclomethicone; Cyclohexasiloxane; Cyclotetrasiloxane; OMCTS
  • Viscosity: 2.3 cSt
  • ΔHfus: 18.4 kJ/mol
  • ΔHvap: 45.6 kJ/mol
  • Dipole moment: 1.09 debye
  • Vapor pressure, 23 °C: 1 mm
  • Dielectric constant: 2.39
  • Ring strain: 1.00 kJ/mol
  • Surface tension, 20 °C: 17.9 mN/m
  • Critical temperature: 314 °C
  • Critical pressure: 1.03 mPa
  • Specific heat: 502 J/g/°
  • Coefficient of thermal expansion: 0.8 x 10-3
  • Cryoscopic constant: 11.2
  • Henry’s law constant, Hc: 3.4 ± 1.7
  • Ea, polym: 79 kJ/mol
  • Octanol/water partition coefficient, log Kow: 5.1
  • Basic building block for silicones by ring-opening polymerization
  • Solubility, water: 50 ?g/l
Supplier's Site Datasheet

Technical Specifications

  Gelest, Inc.
Product Category Inorganic Chemicals and Compounds
Product Number SIO6700.0
Product Name OCTAMETHYLCYCLOTETRASILOXANE, 98%
Chemical Formula C 8 H 2 4 O 4 Si 4
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