Additional Properties
Hydrolytic Sensitivity 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required Application Precursor for low temp. epitaxy of doped crystalline silicon.1,2 Employed in low temperature CVD of amorphous silicon.2 Reference 1. Francis, T. et al. US Pat. Appl. 20120003819, 2012. 2. Kanoh, H. et al. Jpn. J. Appl. Phys. 1993, 32, 2613. Safety
Packaging Under Nitrogen Volatile Higher Silane Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier. Isotetrasilane; (Trisilyl)silane; 2-Silyltrisilane PYROPHORIC AIR TRANSPORT FORBIDDEN
?Hvap: 32.5 kJ/mol
Precursor for low temp. epitaxy of doped crystalline silicon
Employed in low temperature CVD of amorphous silicon
Gelest, Inc.
Done
Datasheet
Description
Additional Properties
Hydrolytic Sensitivity 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required Application Precursor for low temp. epitaxy of doped crystalline silicon.1,2 Employed in low temperature CVD of amorphous silicon.2 Reference 1. Francis, T. et al. US Pat. Appl. 20120003819, 2012. 2. Kanoh, H. et al. Jpn. J. Appl. Phys. 1993, 32, 2613. Safety
Packaging Under Nitrogen Volatile Higher Silane Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier. Isotetrasilane; (Trisilyl)silane; 2-Silyltrisilane PYROPHORIC AIR TRANSPORT FORBIDDEN
?Hvap: 32.5 kJ/mol
Precursor for low temp. epitaxy of doped crystalline silicon
Employed in low temperature CVD of amorphous silicon
Additional Properties
Hydrolytic Sensitivity 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required Application Precursor for low temp. epitaxy of doped crystalline silicon.1,2 Employed in low temperature CVD of amorphous silicon.2 Reference 1. Francis, T. et al. US Pat. Appl. 20120003819, 2012. 2. Kanoh, H. et al. Jpn. J. Appl. Phys. 1993, 32, 2613. Safety
Packaging Under Nitrogen Volatile Higher Silane Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier. Isotetrasilane; (Trisilyl)silane; 2-Silyltrisilane PYROPHORIC AIR TRANSPORT FORBIDDEN
?Hvap: 32.5 kJ/mol
Precursor for low temp. epitaxy of doped crystalline silicon
Employed in low temperature CVD of amorphous silicon
Additional Properties
Hydrolytic Sensitivity 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required
Application
Precursor for low temp. epitaxy of doped crystalline silicon.1,2 Employed in low temperature CVD of amorphous silicon.2
Reference
1. Francis, T. et al. US Pat. Appl. 20120003819, 2012. 2. Kanoh, H. et al. Jpn. J. Appl. Phys. 1993, 32, 2613.
Safety
Packaging Under Nitrogen
Volatile Higher Silane
Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.
Isotetrasilane; (Trisilyl)silane; 2-Silyltrisilane
PYROPHORIC
AIR TRANSPORT FORBIDDEN
?Hvap: 32.5 kJ/mol
Precursor for low temp. epitaxy of doped crystalline silicon
Employed in low temperature CVD of amorphous silicon
