Gelest, Inc. DIIODOSILANE, 99% SID3520.1

Description
Additional Properties Hydrolytic Sensitivity 9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required Safety Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Diiodosilane; Silicon diiodide High purity grade for ALD ?Hvap: 33.7 kJ/mol Surface tension, 15 °: 44.1 mN/m Cleaves ethers; converts alcohols to iodides Reagent for conversion of carbamates to ureas via isocyanates
Datasheet
Description
Additional Properties Hydrolytic Sensitivity 9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required Safety Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Diiodosilane; Silicon diiodide High purity grade for ALD ?Hvap: 33.7 kJ/mol Surface tension, 15 °: 44.1 mN/m Cleaves ethers; converts alcohols to iodides Reagent for conversion of carbamates to ureas via isocyanates
Datasheet

Suppliers

Company
Product
Description
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DIIODOSILANE, 99% - SID3520.1 - Gelest, Inc.
Morrisville, PA, United States
DIIODOSILANE, 99%
SID3520.1
DIIODOSILANE, 99% SID3520.1
Additional Properties Hydrolytic Sensitivity 9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required Safety Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Diiodosilane; Silicon diiodide High purity grade for ALD ?Hvap: 33.7 kJ/mol Surface tension, 15 °: 44.1 mN/m Cleaves ethers; converts alcohols to iodides Reagent for conversion of carbamates to ureas via isocyanates

Additional Properties


  • Hydrolytic Sensitivity 9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required
    Safety
  • Packaging Under Nitrogen
    ALD Material
    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
    Diiodosilane; Silicon diiodide
  • High purity grade for ALD
  • ?Hvap: 33.7 kJ/mol
  • Surface tension, 15 °: 44.1 mN/m
  • Cleaves ethers; converts alcohols to iodides
  • Reagent for conversion of carbamates to ureas via isocyanates
Supplier's Site Datasheet

Technical Specifications

  Gelest, Inc.
Product Category Organic Chemicals
Product Number SID3520.1
Product Name DIIODOSILANE, 99%
Chemical Formula H 2 I 2 Si
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