Additional Properties
Hydrolytic Sensitivity 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required Safety
Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Dimethylisopropoxyal
uminum; Dimethyl(2-propanola
to)-aluminum; Dimethylaluminum isopropoxide
Vapor pressure, 70 °C: 10 mm
Gelest, Inc.
Done
Datasheet
Description
Additional Properties
Hydrolytic Sensitivity 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required Safety
Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Dimethylisopropoxyal
uminum; Dimethyl(2-propanola
to)-aluminum; Dimethylaluminum isopropoxide
Vapor pressure, 70 °C: 10 mm
Additional Properties
Hydrolytic Sensitivity 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required Safety
Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Dimethylisopropoxyal
uminum; Dimethyl(2-propanola
to)-aluminum; Dimethylaluminum isopropoxide
Vapor pressure, 70 °C: 10 mm
Additional Properties
Hydrolytic Sensitivity 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required
Safety
Packaging Under Nitrogen
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Dimethylisopropoxyaluminum; Dimethyl(2-propanolato)-aluminum; Dimethylaluminum isopropoxide
