Additional Properties
Hydrolytic Sensitivity 7: reacts slowly with moisture/water Application High deposition rate, stable, optimized precursor for copper.1,2,3 Reference 1. Kaloyeros, A. et al. U.S. Patent 6,037,001, 2000. 2. Burke, A. et al. J. Appl. Phys. 1997, 82, 4651. 3. Braeckelmann, G. et al. J. Vac. Sci. Technol. B 1996, 14, 1828. Safety
Hazard Info oral rat, LD50: 540 mg/kg
Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Copper(I)/(I) hexafluoro-2,4-penta
nedionate-vinyltrime
thylsilane complex; Copper HFAC VTMS
10-20% Copper(II)
High deposition rate, stable, optimized precursor for copper
Gelest, Inc.
Done
Datasheet
Description
Additional Properties
Hydrolytic Sensitivity 7: reacts slowly with moisture/water Application High deposition rate, stable, optimized precursor for copper.1,2,3 Reference 1. Kaloyeros, A. et al. U.S. Patent 6,037,001, 2000. 2. Burke, A. et al. J. Appl. Phys. 1997, 82, 4651. 3. Braeckelmann, G. et al. J. Vac. Sci. Technol. B 1996, 14, 1828. Safety
Hazard Info oral rat, LD50: 540 mg/kg
Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Copper(I)/(I) hexafluoro-2,4-penta
nedionate-vinyltrime
thylsilane complex; Copper HFAC VTMS
10-20% Copper(II)
High deposition rate, stable, optimized precursor for copper
Additional Properties
Hydrolytic Sensitivity 7: reacts slowly with moisture/water Application High deposition rate, stable, optimized precursor for copper.1,2,3 Reference 1. Kaloyeros, A. et al. U.S. Patent 6,037,001, 2000. 2. Burke, A. et al. J. Appl. Phys. 1997, 82, 4651. 3. Braeckelmann, G. et al. J. Vac. Sci. Technol. B 1996, 14, 1828. Safety
Hazard Info oral rat, LD50: 540 mg/kg
Packaging Under Nitrogen ALD Material Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber. Copper(I)/(I) hexafluoro-2,4-penta
nedionate-vinyltrime
thylsilane complex; Copper HFAC VTMS
10-20% Copper(II)
High deposition rate, stable, optimized precursor for copper
Additional Properties
Hydrolytic Sensitivity 7: reacts slowly with moisture/water
Application
High deposition rate, stable, optimized precursor for copper.1,2,3
Reference
1. Kaloyeros, A. et al. U.S. Patent 6,037,001, 2000. 2. Burke, A. et al. J. Appl. Phys. 1997, 82, 4651. 3. Braeckelmann, G. et al. J. Vac. Sci. Technol. B 1996, 14, 1828.
Safety
Hazard Info oral rat, LD50: 540 mg/kg
Packaging Under Nitrogen
ALD Material
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Copper(I)/(I) hexafluoro-2,4-pentanedionate-vinyltrimethylsilane complex; Copper HFAC VTMS
10-20% Copper(II)
High deposition rate, stable, optimized precursor for copper
