The GP2T080A120X-KBT is a bare die MOSFET in a KGD blue tape array format with a die size of 26 x 26 mm and a die-to-die spacing of 1100 µm. It must be stored in a nitrogen-purged cabinet between 15°C and 25°C with humidity below 30% RH, or vacuum-sealed in a moisture barrier bag, and has a maximum shelf life of six months. ESD handling protocols are required. The array contains 676 dies.
SemiQ designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors as well as 150mm SiC epitaxial wafers. SiC Diodes and MOSFETs are available in both discrete and module form factors as well as bare die and wafer form and provide important performance advantages, such as near-constant junction capacitance, low insertion loss, and high isolation. SemiQ also offers power conversion application expertise which includes sub system design and semi-custom modules. The company is uniquely positioned with a fully redundant SiC supply chain.
Micross & SemiQ collaborate to offer an extensive range of SiC capabilities to support Aerospace & Defense, Automotive, Commercial, Industrial, Communications, Computing, Consumer and Medical markets.
| Micross Components, Inc. | |
|---|---|
| Product Category | RF Transistors |
| Product Number | GP2T080A120X |
| Product Name | SemiQ Inc. |
