Manufacturer: Microsemi Corporation
Win Source Part Number: 1325625-TAN250A
Category: Discrete Semiconductor Products>Transistors
Packaging: Bulk
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 575W
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 30A
Gain: 6.2db ~ 7dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: 55AW
Temperature Range - Operating: 200°C (TJ)
Case / Package: 55AW
ECCN: EAR99
Fake Threat In the Open Market: 65
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Other Part Number: 150-TAN250A,TAN250A-
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)
RF TRANS NPN 60V 1.215GHZ 55AW
RF TRANS NPN 60V 1.215GHZ 55AW
| Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1325625-TAN250A | TAN250A | TAN250A |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF | Bipolar RF Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN | |
| Package Type | SOT3; 55AW | 55AW | |
| Packing Method | Bulk; Bulk | Bulk; Bulk | |
| TJ | 200 C (392 F) | 200 C (392 F) | |
| Power Gain | 6.2 to 7 dB | 6.2 dB |
