Microsemi Corp. TRANSISTORS - Transistors (BJT) - Arrays - SG2003J/883B SG2003J/883B

Manufacturer: Microsemi Corporation
Win Source Part Number: 319518-SG2003J/883B
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: 7 NPN Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 16-CDIP
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min): 1000 @ 350mA, 2V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 7-Element, NPN, Silicon, Product overview: SG2003J/883B from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.5A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.5A, 50V, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-SG2003J/883B can be used for catalog matching and distributor lookup.