Microsemi Corp. Bipolar RF Transistors S200-50

Description
RF TRANS NPN 110V 30MHZ 55HX
  • Bipolar RF Transistors - S200-50 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1278701-S200-50 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
RF TRANS NPN 110V 30MHZ 55HX
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - S200-50 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
S200-50
Bipolar RF Transistors S200-50
RF TRANS NPN 110V 30MHZ 55HX

RF TRANS NPN 110V 30MHZ 55HX

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1278701-S200-50 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1278701-S200-50
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1278701-S200-50
Win Source Part Number: 1278701-S200-50 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Bulk Standard Package: 1 Power - Max: 320W Voltage - Collector Emitter Breakdown (Max): 110V Current - Collector (Ic) (Max): 30A Gain: 12dB ~ 14.5dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Frequency - Transition: 1.5MHz ~ 30MHz Mounting Type: Chassis Mount Package / Case: 55HX Supplier Device Package: 55HX Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Microsemi Corporation Other Names: S200-50,150-S200-50 Product Status: Obsolete

Win Source Part Number: 1278701-S200-50
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Package: Bulk
Standard Package: 1
Power - Max: 320W
Voltage - Collector Emitter Breakdown (Max): 110V
Current - Collector (Ic) (Max): 30A
Gain: 12dB ~ 14.5dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.5MHz ~ 30MHz
Mounting Type: Chassis Mount
Package / Case: 55HX
Supplier Device Package: 55HX
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microsemi Corporation
Other Names: S200-50,150-S200-50
Product Status: Obsolete

Buy Now Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
S200-50
Discrete Semiconductor Products - Transistors - Bipolar (BJT) S200-50
RF TRANS NPN 110V 30MHZ 55HX

RF TRANS NPN 110V 30MHZ 55HX

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number S200-50 1278701-S200-50 S200-50
Product Name Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN
Package Type 55HX SOT3
IC(max) 30000 milliamps
VCEO 110 volts 110 volts
Power Gain 12 dB
Unlock Full Specs
to access all available technical data