Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - PT1203 PT1203

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 210301-PT1203 Packaging: Tube/Rail Mounting: Chassis Mount Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 690W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ISOTOP Dimension: SOT-227-4, miniBLOC Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 30A Gate-Source Threshold Voltage: 5V @ 5mA Max Gate Charge: 365nC @ 10V Max Input Capacitance: 9480pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 330 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 210301-PT1203 Packaging: Tube/Rail Mounting: Chassis Mount Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 690W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ISOTOP Dimension: SOT-227-4, miniBLOC Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 30A Gate-Source Threshold Voltage: 5V @ 5mA Max Gate Charge: 365nC @ 10V Max Input Capacitance: 9480pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 330 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - PT1203 - 210301-PT1203 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PT1203
210301-PT1203
TRANSISTORS - Transistors - FETs, MOSFETs - RF - PT1203 210301-PT1203
Manufacturer: Microsemi Corporation Win Source Part Number: 210301-PT1203 Packaging: Tube/Rail Mounting: Chassis Mount Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 690W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: ISOTOP Dimension: SOT-227-4, miniBLOC Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 30A Gate-Source Threshold Voltage: 5V @ 5mA Max Gate Charge: 365nC @ 10V Max Input Capacitance: 9480pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 330 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient

Manufacturer: Microsemi Corporation
Win Source Part Number: 210301-PT1203
Packaging: Tube/Rail
Mounting: Chassis Mount
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 690W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ISOTOP
Dimension: SOT-227-4, miniBLOC
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 30A
Gate-Source Threshold Voltage: 5V @ 5mA
Max Gate Charge: 365nC @ 10V
Max Input Capacitance: 9480pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 330 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 210301-PT1203
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - PT1203
Polarity N-Channel; N-Channel
V(BR)DSS 1200 volts
PD 690000 milliwatts
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