SiC MOSFETs for high-efficiency, high-temperature applications, available in TO-247 package with a breakdown voltage of 1200 V and on-resistance ratings ranging from 2.7 mΩ to 750 mΩ. Devices feature low switching losses, high thermal conductivity, and are qualified to AEC-Q101 for automotive reliability. The series supports high-power density designs in industrial, automotive, and renewable energy systems.
MOSFET UNRLS, FG, SIC MOSFET, TO-247
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MSC280SMA120B |
| Product Name | MOSFET |
