Silicon Carbide (SiC) MOSFET with a voltage rating of 700 V and a drain-source on-resistance of 90 mΩ, packaged in a D3PAK. The device is designed for high-efficiency, high-frequency power applications and is qualified to the AEC-Q101 standard. It features low switching losses, high thermal conductivity, and operates at elevated junction temperatures to enable downsized systems.
MOSFET UNRLS, FG, SIC MOSFET, TO-268
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MSC090SMA070S |
| Product Name | MOSFET |
