Microsemi Corp. MOSFET MSC090SMA070B

Description
MOSFET UNRLS, FG, SIC MOSFET, TO-247
Description
MOSFET UNRLS, FG, SIC MOSFET, TO-247
Datasheet
Datasheet Summary
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The MSC090SMA070B is a silicon carbide (SiC) MOSFET in a TO-247 package, rated for 700 V and a drain-source on-resistance of 90 mΩ. It is designed for high-efficiency, high-power density applications with low switching losses, high thermal conductivity, and operation at elevated junction temperatures. The device supports robust unclamped inductive switching and meets the AEC-Q101 qualification standard. Its TO-247 package is compatible with standard mounting practices for power discrete devices.

Datasheet Summary
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The MSC090SMA070B is a silicon carbide (SiC) MOSFET in a TO-247 package, rated for 700 V and a drain-source on-resistance of 90 mΩ. It is designed for high-efficiency, high-power density applications with low switching losses, high thermal conductivity, and operation at elevated junction temperatures. The device supports robust unclamped inductive switching and meets the AEC-Q101 qualification standard. Its TO-247 package is compatible with standard mounting practices for power discrete devices.

Suppliers

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Sheung Wan, Hong Kong
MOSFET UNRLS, FG, SIC MOSFET, TO-247

MOSFET UNRLS, FG, SIC MOSFET, TO-247

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSC090SMA070B
Product Name MOSFET
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