Microsemi Corp. MOSFET MSC080SMA120J

Description
MOSFET UNRLS, FG, SIC MOSFET, SOT-227
Description
MOSFET UNRLS, FG, SIC MOSFET, SOT-227
Datasheet
Datasheet Summary
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The MSC080SMA120J is a 1200 V silicon carbide (SiC) MOSFET in a SOT-227 package with a typical on-resistance of 80 mΩ. It is designed for high-efficiency, high-frequency power applications and is qualified to the AEC-Q101 standard. The device supports high junction temperatures and offers low switching losses, enabling improved power density and reduced cooling requirements compared to silicon-based solutions.

Datasheet Summary
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The MSC080SMA120J is a 1200 V silicon carbide (SiC) MOSFET in a SOT-227 package with a typical on-resistance of 80 mΩ. It is designed for high-efficiency, high-frequency power applications and is qualified to the AEC-Q101 standard. The device supports high junction temperatures and offers low switching losses, enabling improved power density and reduced cooling requirements compared to silicon-based solutions.

Suppliers

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Sheung Wan, Hong Kong
MOSFET UNRLS, FG, SIC MOSFET, SOT-227

MOSFET UNRLS, FG, SIC MOSFET, SOT-227

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSC080SMA120J
Product Name MOSFET
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