Microsemi Corp. MOSFET MSC080SMA120B

Description
MOSFET UNRLS, FG, SIC MOSFET, TO-247
Description
MOSFET UNRLS, FG, SIC MOSFET, TO-247
Datasheet
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SiC MOSFET in a TO-247 package with a 1200 V breakdown voltage and a 80 mΩ on-resistance, designed for high-efficiency, high-power applications such as EV chargers, motor drives, and PV inverters. It supports AEC-Q101 qualification for automotive use and features low switching losses, high thermal conductivity, and positive temperature coefficient for easy paralleling.

Datasheet Summary
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SiC MOSFET in a TO-247 package with a 1200 V breakdown voltage and a 80 mΩ on-resistance, designed for high-efficiency, high-power applications such as EV chargers, motor drives, and PV inverters. It supports AEC-Q101 qualification for automotive use and features low switching losses, high thermal conductivity, and positive temperature coefficient for easy paralleling.

Suppliers

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Sheung Wan, Hong Kong
MOSFET UNRLS, FG, SIC MOSFET, TO-247

MOSFET UNRLS, FG, SIC MOSFET, TO-247

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSC080SMA120B
Product Name MOSFET
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