Microsemi Corp. MOSFET MSC035SMA070S

Description
MOSFET UNRLS, FG, SIC MOSFET, TO-268
Description
MOSFET UNRLS, FG, SIC MOSFET, TO-268
Datasheet
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Silicon carbide (SiC) MOSFET designed for high-efficiency, high-power applications up to 700 V, featuring a 35 mΩ on-resistance and housed in a D3PAK package. It offers low switching losses, high thermal conductivity, and operation at elevated junction temperatures. The device is qualified to AEC-Q101 for automotive reliability. It supports paralleling due to a positive temperature coefficient and enables downsized systems with reduced cooling requirements.

Datasheet Summary
Powered by GS/AI

Silicon carbide (SiC) MOSFET designed for high-efficiency, high-power applications up to 700 V, featuring a 35 mΩ on-resistance and housed in a D3PAK package. It offers low switching losses, high thermal conductivity, and operation at elevated junction temperatures. The device is qualified to AEC-Q101 for automotive reliability. It supports paralleling due to a positive temperature coefficient and enables downsized systems with reduced cooling requirements.

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Sheung Wan, Hong Kong
MOSFET UNRLS, FG, SIC MOSFET, TO-268

MOSFET UNRLS, FG, SIC MOSFET, TO-268

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MSC035SMA070S
Product Name MOSFET
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