SiC MOSFET in SOT-227 package with a breakdown voltage of 1200 V and a gate-source threshold voltage of 2.5 mΩ, designed for high-efficiency, high-power density applications. The device supports high switching frequencies, operates at elevated junction temperatures, and is qualified to AEC-Q101 standard. It features low switching losses and a positive temperature coefficient for easy paralleling. The SOT-227 package enables compact mounting suitable for industrial, automotive, and power conversion systems.
MOSFET UNRLS, FG, SIC MOSFET, SOT-227
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MSC025SMA120J |
| Product Name | MOSFET |
