Microsemi Corp. Bipolar RF Transistors MS2473

Description
RF TRANS NPN 65V 1.09GHZ M112
  • Bipolar RF Transistors - MS2473 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors - 1350746-MS2473 - Win Source Electronics
    Win Source Electronics
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Description
RF TRANS NPN 65V 1.09GHZ M112
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Suppliers

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Product
Description
Supplier Links
Bipolar RF Transistors - MS2473 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MS2473
Bipolar RF Transistors MS2473
RF TRANS NPN 65V 1.09GHZ M112

RF TRANS NPN 65V 1.09GHZ M112

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors - 1350746-MS2473 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
1350746-MS2473
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors 1350746-MS2473
Win Source Part Number: 1350746-MS2473 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors Package: Bulk Standard Package: 1 Power - Max: 2300W Voltage - Collector Emitter Breakdown (Max): 65V Gain: 6dB Transistor Type: NPN Frequency - Transition: 1.09GHz Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112 Temperature Range - Operating: 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: Microsemi Corporation Product Status: Obsolete Current - Collector (Ic) (Max): 46A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V

Win Source Part Number: 1350746-MS2473
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Package: Bulk
Standard Package: 1
Power - Max: 2300W
Voltage - Collector Emitter Breakdown (Max): 65V
Gain: 6dB
Transistor Type: NPN
Frequency - Transition: 1.09GHz
Mounting Type: Chassis Mount
Package / Case: M112
Supplier Device Package: M112
Temperature Range - Operating: 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: Microsemi Corporation
Product Status: Obsolete
Current - Collector (Ic) (Max): 46A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V

Buy Now Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MS2473
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MS2473
RF TRANS NPN 65V 1.09GHZ M112

RF TRANS NPN 65V 1.09GHZ M112

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors RF Transistors Bipolar RF Transistors
Product Number MS2473 1350746-MS2473 MS2473
Product Name Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN
Package Type M112 SOT3
IC(max) 46000 milliamps
VCEO 65 volts 65 volts
Power Gain 6 dB 6 dB
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