Microsemi Corp. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors MS2473

Description
Win Source Part Number: 1350746-MS2473 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors Package: Bulk Standard Package: 1 Power - Max: 2300W Voltage - Collector Emitter Breakdown (Max): 65V Gain: 6dB Transistor Type: NPN Frequency - Transition: 1.09GHz Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112 Temperature Range - Operating: 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: Microsemi Corporation Product Status: Obsolete Current - Collector (Ic) (Max): 46A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V
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Description
Win Source Part Number: 1350746-MS2473 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors Package: Bulk Standard Package: 1 Power - Max: 2300W Voltage - Collector Emitter Breakdown (Max): 65V Gain: 6dB Transistor Type: NPN Frequency - Transition: 1.09GHz Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112 Temperature Range - Operating: 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: Microsemi Corporation Product Status: Obsolete Current - Collector (Ic) (Max): 46A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors - 1350746-MS2473 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
1350746-MS2473
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors 1350746-MS2473
Win Source Part Number: 1350746-MS2473 Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors Package: Bulk Standard Package: 1 Power - Max: 2300W Voltage - Collector Emitter Breakdown (Max): 65V Gain: 6dB Transistor Type: NPN Frequency - Transition: 1.09GHz Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112 Temperature Range - Operating: 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: Microsemi Corporation Product Status: Obsolete Current - Collector (Ic) (Max): 46A DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V

Win Source Part Number: 1350746-MS2473
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Package: Bulk
Standard Package: 1
Power - Max: 2300W
Voltage - Collector Emitter Breakdown (Max): 65V
Gain: 6dB
Transistor Type: NPN
Frequency - Transition: 1.09GHz
Mounting Type: Chassis Mount
Package / Case: M112
Supplier Device Package: M112
Temperature Range - Operating: 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: Microsemi Corporation
Product Status: Obsolete
Current - Collector (Ic) (Max): 46A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V

Buy Now Datasheet
Bipolar RF Transistors - MS2473 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
MS2473
Bipolar RF Transistors MS2473
RF TRANS NPN 65V 1.09GHZ M112

RF TRANS NPN 65V 1.09GHZ M112

Supplier's Site Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MS2473
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MS2473
RF TRANS NPN 65V 1.09GHZ M112

RF TRANS NPN 65V 1.09GHZ M112

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Acme Chip Technology Co., Limited
Product Category RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1350746-MS2473 MS2473 MS2473
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
Package Type SOT3 M112
TJ 200 C (392 F) 200 C (392 F)
Power Gain 6 dB 6 dB
Output Power 2300 watts 2300 watts 2300 watts
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