Manufacturer: Microsemi Corporation
Win Source Part Number: 928125-MS2472
Operating Temperature Range: 200°C (TJ)
Features: RF Transistor NPN 65V 40A 1.025GHz ~ 1.15GHz 1350W Chassis Mount M112
Package: Bulk
Package: M112
Mounting: Chassis Mount
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: M112
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.400 X 0.500 INCH, HERMETIC SEALED, M112, 2 PIN Product overview: MS2472 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-MS2472 can be used for catalog matching and distributor lookup.
RF TRANS NPN 65V 1.15GHZ M112
RF TRANS NPN 65V 1.15GHZ M112
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 928125-MS2472 | 283-MS2472 | MS2472 | MS2472 |
| Product Name | TRANSISTORS - RF Transistors (BJT) - MS2472 | Bipolar Transistor | Bipolar RF Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN | ||
| Package Type | SOT3; M112 | M112 | ||
| IC(max) | 40000 milliamps | |||
| VCEO | 65 volts | 65 volts | ||
| Power Gain | 5.6 dB |