Microsemi Corp. TRANSISTORS - RF Transistors (BJT) - MS2267 MS2267

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1079829-MS2267 Packaging: Bulk Mounting: Chassis Mount Gain: 8dB to 8.7dB Frequency - Transition: 960MHz to 1.215GHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 250°C (TJ) Case / Package: M214 Maximum Current Collector: 20A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Typical Gain (hFE) (Min): 10 @ 1A, 5V Maximum Power Dissipation: 575W Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - RF Transistors (BJT) - MS2267 - 1079829-MS2267 - Win Source Electronics
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1079829-MS2267 Packaging: Bulk Mounting: Chassis Mount Gain: 8dB to 8.7dB Frequency - Transition: 960MHz to 1.215GHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 250°C (TJ) Case / Package: M214 Maximum Current Collector: 20A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Typical Gain (hFE) (Min): 10 @ 1A, 5V Maximum Power Dissipation: 575W Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - RF Transistors (BJT) - MS2267 - 1079829-MS2267 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - MS2267
1079829-MS2267
TRANSISTORS - RF Transistors (BJT) - MS2267 1079829-MS2267
Manufacturer: Microsemi Corporation Win Source Part Number: 1079829-MS2267 Packaging: Bulk Mounting: Chassis Mount Gain: 8dB to 8.7dB Frequency - Transition: 960MHz to 1.215GHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 250°C (TJ) Case / Package: M214 Maximum Current Collector: 20A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Typical Gain (hFE) (Min): 10 @ 1A, 5V Maximum Power Dissipation: 575W Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient

Manufacturer: Microsemi Corporation
Win Source Part Number: 1079829-MS2267
Packaging: Bulk
Mounting: Chassis Mount
Gain: 8dB to 8.7dB
Frequency - Transition: 960MHz to 1.215GHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 250°C (TJ)
Case / Package: M214
Maximum Current Collector: 20A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Typical Gain (hFE) (Min): 10 @ 1A, 5V
Maximum Power Dissipation: 575W
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MS2267
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MS2267
RF TRANS NPN 60V 1.215GHZ M214

RF TRANS NPN 60V 1.215GHZ M214

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 1079829-MS2267 MS2267
Product Name TRANSISTORS - RF Transistors (BJT) - MS2267 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN
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