Manufacturer: Microsemi Corporation
Win Source Part Number: 1325039-MS2212
Category: Discrete Semiconductor Products>Transistors
Packaging: Bulk
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 50W
Voltage - Collector Emitter Breakdown (Max): 55V
Current - Collector (Ic) (Max): 1.8A
Gain: 8.1dB ~ 8.9dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
Frequency - Transition: 960MHz ~ 1.215GHz
Supplier Device Package: M222
Temperature Range - Operating: 250°C (TJ)
Case / Package: M222
ECCN: EAR99
Fake Threat In the Open Market: 68
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Other Part Number: 150-MS2212,MS2212-ND
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)
RF TRANS NPN 55V 1.215GHZ M222
RF TRANS NPN 55V 1.215GHZ M222
| Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1325039-MS2212 | MS2212 | MS2212 |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF | Bipolar RF Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN | |
| Package Type | SOT3; M222 | M222 | |
| Packing Method | Bulk; Bulk | Bulk; Bulk | |
| TJ | 250 C (482 F) | 250 C (482 F) | |
| Power Gain | 8.1 to 8.9 dB | 8.1 dB |
