Microsemi Corp. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF MS2209

Description
Win Source Part Number: 1232484-MS2209 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Bulk Standard Package: 1 Power - Max: 220W Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 7A Gain: 8.4dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V Frequency - Transition: 225MHz Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218 Temperature Range - Operating: 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: Microsemi Corporation Other Names: 150-MS2209,MS2209-ND Product Status: Obsolete
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Description
Win Source Part Number: 1232484-MS2209 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Bulk Standard Package: 1 Power - Max: 220W Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 7A Gain: 8.4dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V Frequency - Transition: 225MHz Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218 Temperature Range - Operating: 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: Microsemi Corporation Other Names: 150-MS2209,MS2209-ND Product Status: Obsolete
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1232484-MS2209 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1232484-MS2209
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1232484-MS2209
Win Source Part Number: 1232484-MS2209 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Bulk Standard Package: 1 Power - Max: 220W Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 7A Gain: 8.4dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V Frequency - Transition: 225MHz Mounting Type: Chassis Mount Package / Case: M218 Supplier Device Package: M218 Temperature Range - Operating: 200°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: Microsemi Corporation Other Names: 150-MS2209,MS2209-ND Product Status: Obsolete

Win Source Part Number: 1232484-MS2209
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Package: Bulk
Standard Package: 1
Power - Max: 220W
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 7A
Gain: 8.4dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V
Frequency - Transition: 225MHz
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218
Temperature Range - Operating: 200°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: Microsemi Corporation
Other Names: 150-MS2209,MS2209-ND
Product Status: Obsolete

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MS2209
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MS2209
RF TRANS NPN 65V 225MHZ M218

RF TRANS NPN 65V 225MHZ M218

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors
Product Number 1232484-MS2209 MS2209
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type SOT3
TJ 200 C (392 F)
Power Gain 8.4 dB
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